Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Reexamination Certificate
2005-03-30
2010-06-29
Lam, Tuan (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
C327S424000, C327S427000, C327S434000, C327S437000
Reexamination Certificate
active
07746155
ABSTRACT:
In accordance with the present invention, there is provided a circuit and method for providing a switchable strong pulldown for a power FET in an off state to avoid inadvertent or false turn ons. A strong pulldown is provided to the gate of a power FET to avoid inadvertent turn on during output swings. In other cases, the gate of the power FET is pulled down weakly to reduce EMI and voltage noise in the circuit. In a particular exemplary embodiment, the present invention provides a circuit and method for obtaining a strong pulldown on the gate of a power FET in an off state, while providing a weak pulldown during turn on to turn off transitions. The invention avoids false turn ons during fast output transitions while maintaining relatively high EMI protection.
REFERENCES:
patent: 5467242 (1995-11-01), Kiraly
patent: 5625312 (1997-04-01), Kawakami et al.
patent: 6329866 (2001-12-01), Watarai
patent: 6496036 (2002-12-01), Kan
patent: 7023681 (2006-04-01), Kitahara et al.
patent: 7170324 (2007-01-01), Huber et al.
patent: 7292087 (2007-11-01), Cappon
patent: 2003/0112042 (2003-06-01), Takahashi
patent: 2006/0001458 (2006-01-01), Nii
patent: 2006/0012406 (2006-01-01), Huber et al.
patent: 2009/0174439 (2009-07-01), Luo et al.
Brady III Wade J.
Lam Tuan
Nguyen Hiep
Patti John J.
Telecky , Jr. Frederick J.
LandOfFree
Circuit and method for transistor turn-off with strong pulldown does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Circuit and method for transistor turn-off with strong pulldown, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit and method for transistor turn-off with strong pulldown will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4177801