Circuit and method for semiconductor leakage current compensatio

Details Circuit and method for semiconductor leakage current compensatio Circuit and method for semiconductor leakage current compensatio

1987-11-27

1988-08-09

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 307310, 307572, 307570, 307491, 307497, 307501, 330253, 330256, H03F 345, H03K 1710, H03K 17687, H03K 19003

Patent

active

047630280

ABSTRACT:
Circuitry and method for compensating for the junction leakage current of a reverse-biased semiconductor device. Compensation is effected by trimming the leakage of a compensating device at a high temperature in order to accurately compensate the leakage current over a broad range of temperatures. Potential applications include reduction of the input bias current of an amplifier or differential amplifier.

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Marty, "BiFET/Trim FET Operational Amplifiers", Electronic Engineering, vol. 52, No. 639, pp. 109-111, 121, 125-127, Jun. 1980.
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Hamilton, Handbook of Linear Integrated Electronics for Research, pp. 49-50 and 188-190, McGraw-Hill Book Co., 1977.

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