Circuit and method for quickly turning off MOS device

Details Circuit and method for quickly turning off MOS device Circuit and method for quickly turning off MOS device

2006-03-20

2008-03-04

Patel, Rajnikant B. (Department: 2838)

Oscillators

Solid state active element oscillator

Transistors

C331S109000, C327S534000, C330S255000

Reexamination Certificate

active

07339441

ABSTRACT:
An OTA driving an MOS device needs to turn it off quickly to minimize overshoot during a heavy to light load state. The drains of the MOS device can be used to accelerate turning off the MOS device. A first drain is connected to the gate of the MOS device. A second drain is connected to a base of a bipolar device. The emitter of the bipolar device is connected to the MOS device gate. Notably, this bipolar device is active during the heavy to light load state. Therefore, any current provided by the second drain is then multiplied by the beta of the bipolar device. The increased current generated on the emitter of the bipolar transistor and provided to the gate of the MOS device can advantageously accelerate the turnoff of that MOS device. The first drain can provide minimal additional current during the heavy to light load state.

REFERENCES:
patent: 5570980 (1996-11-01), Nakamura et al.
patent: 5910737 (1999-06-01), Kesler
patent: 5999062 (1999-12-01), Gilbert
patent: 6674247 (2004-01-01), Mead et al.
patent: 7138851 (2006-11-01), Sumita et al.

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