Circuit and method for preventing latch-up in a CMOS semiconduct

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

327535, H03K 1716

Patent

active

059429321

ABSTRACT:
A circuit and method for preventing latch-up in a CMOS semiconductor device. In an n-type substrate and p-type well region semiconductor, the method comprises the steps of pulling V.sub.sub of the substrate terminal to V.sub.CC and pulling V.sub.well of the well region terminal to V.sub.SS when V.sub.CC is below a predetermined voltage V.sub.det, and releasing V.sub.CC and V.sub.SS from respective substrate and well region terminals when V.sub.CC rises above V.sub.det. Or, if V.sub.CC is above both V.sub.det and V.sub.sub then pulling V.sub.sub to V.sub.CC and pulling V.sub.well to V.sub.SS. If V.sub.CC is above V.sub.det but below V.sub.sub then pulling V.sub.well below V.sub.SS. Similarly, in a p-type substrate and n-type well region semiconductor, the method comprises the steps of pulling V.sub.sub of the substrate terminal to V.sub.SS and pulling V.sub.well of the well region terminal to V.sub.CC when V.sub.CC is below a predetermined voltage V.sub.det, and releasing V.sub.SS and V.sub.CC from respective substrate and well region terminals when V.sub.CC rises above V.sub.det. Or, if V.sub.CC is above both V.sub.det and V.sub.sub then pulling V.sub.sub to V.sub.SS and V.sub.well to V.sub.CC. If V.sub.CC is above V.sub.det but below V.sub.sub then pulling V.sub.sub below V.sub.SS.

REFERENCES:
patent: 4647956 (1987-03-01), Shrivastava et al.
patent: 4794278 (1988-12-01), Vajdic
patent: 5206553 (1993-04-01), Imai et al.
patent: 5212616 (1993-05-01), Dhong et al.
patent: 5220534 (1993-06-01), Redwine et al.
patent: 5268600 (1993-12-01), Yeu
patent: 5300824 (1994-04-01), Iyengar
patent: 5345422 (1994-09-01), Redwine
patent: 5392186 (1995-02-01), Alexander et al.
patent: 5545934 (1996-08-01), Reddy et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Circuit and method for preventing latch-up in a CMOS semiconduct does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Circuit and method for preventing latch-up in a CMOS semiconduct, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Circuit and method for preventing latch-up in a CMOS semiconduct will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-470180

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.