Circuit and method for generating wordline voltage in...

Details Circuit and method for generating wordline voltage in... Circuit and method for generating wordline voltage in...

2007-05-29

2007-05-29

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185250, C365S185280

Reexamination Certificate

active

11166620

ABSTRACT:
A circuit and method for generating a wordline voltage in a nonvolatile semiconductor memory device. The circuit comprises a switching unit to provide an external program voltage as the wordline voltage, together with a wordline voltage pump to generate the wordline voltage by pumping a power source voltage. After the wordline voltage is raised to a first level by the external program voltage, it is further increased by a pumping operation. According the circuit and method described herein, shortens the time required to reach a target voltage.

REFERENCES:
patent: 6233177 (2001-05-01), Shokouhi et al.
patent: 7064986 (2006-06-01), Lee et al.
patent: 2001/0003511 (2001-06-01), Taura et al.
patent: 2001/0021128 (2001-09-01), Kim
patent: 1997-0051096 (1997-07-01), None
patent: 1998-021578 (1998-06-01), None
patent: 0170279 (1998-10-01), None
patent: 10-2004-0002132 (2004-01-01), None
English language abstract of Korean Publication No. 0170279.
English language abstract of Korean Publication No. 1998-021578.
English language abstract of Korean Publication No. 1997-0051096.
English language abstract of Korean Publication No. 10-2004-0002132.

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