Circuit analysis using electric field-induced effects

Details Circuit analysis using electric field-induced effects Circuit analysis using electric field-induced effects

2005-05-10

2005-05-10

Pert, Evan (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

Reexamination Certificate

active

06891390

ABSTRACT:
Circuitry within a semiconductor die is analyzed by applying an electric field without necessarily directly accessing the circuitry. According to an example embodiment of the present invention, an electric field is applied to a semiconductor die and used to stimulate circuitry therein. A response of the die to the electric field is detected and used to detect an electrical characteristic of the die. This is particularly useful in applications where it is desired to direct stimulation to the die on a nanoscale level, such as when using a fine probe tip (e.g., a scanning probe microscope tip) to apply the electric field. In this manner, the response of the die can be mapped to circuitry within a few nanometers of the probe tip.

REFERENCES:
patent: 5493236 (1996-02-01), Ishii et al.
patent: 5517128 (1996-05-01), Henninger
patent: 6331782 (2001-12-01), White et al.
patent: 6412086 (2002-06-01), Friedman et al.
patent: 6417680 (2002-07-01), Birdsley et al.
patent: 6448096 (2002-09-01), Birdsley et al.
patent: 6686755 (2004-02-01), White et al.

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