Chromium-silicon-nitrogen thin film resistor and apparatus

Details Chromium-silicon-nitrogen thin film resistor and apparatus Chromium-silicon-nitrogen thin film resistor and apparatus

1984-11-19

1986-05-27

Albritton, C. L.

Electrical resistors

With base extending along resistance element

Resistance element coated on base

338309, 118715, H01C 1012

Patent

active

045918210

ABSTRACT:
Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.

REFERENCES:
patent: 3203830 (1965-08-01), Ostrander et al.
patent: 3345210 (1967-10-01), Wilson
patent: 3394087 (1968-07-01), Huang et al.
patent: 3763026 (1973-10-01), Cordes
patent: 3847658 (1974-11-01), Kumagai
patent: 3996551 (1976-12-01), Croson
patent: 4042479 (1977-08-01), Yamazaki et al.
patent: 4079349 (1978-03-01), Dorfeld
patent: 4298505 (1981-11-01), Dorfeld et al.

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