Chromium-silicon-nitrogen resistor material

Compositions – Electrically conductive or emissive compositions – Free metal containing

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29620, 204192F, 219543, 338309, 252518, 427102, 428428, H01B 106

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043929923

ABSTRACT:
Improved thin film resistors and electrical devices and circuits with thin film resistors are fabricated utilizing a chromium, silicon, and nitrogen compound formed preferably by rf reactive sputtering of chromium and silicon in a nitrogen bearing atmosphere. An annealing step is used to produce time-stable resistance values and in combination with variations in the partial pressure of nitrogen during sputter deposition to control the temperature coefficient of resistivity to have positive, negative or zero values.

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patent: 4298505 (1981-11-01), Dorfeld et al.
E. R. Olson et al. "Nitrides of Chromium and Chromium-Titanium Alloys", Journal of Electro-Chemical Soc., vol. 102, No. 2, pp. 73-76, Feb. 1955.

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