Chromeless phase-shift mask and method for making

Details Chromeless phase-shift mask and method for making Chromeless phase-shift mask and method for making

1991-11-04

1993-12-28

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 430269, 430311, 430396, G03F 900

Patent

active

052738507

ABSTRACT:
A method is provided for forming a right angle (30) on a chromeless phase-shift mask (31). A first phase-shift element (32) and a second phase-shift element (33) are positioned at a ninety degree angle, on the chromeless phase-shift mask (31), wherein there is a predetermined space (34) between the first and second phase-shift elements (32,33). The space between the phase-shift elements eliminates hot spot formation that causes unintentional exposure of the semiconductor substrate.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto

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