Chromeless phase mask layout generation

Details Chromeless phase mask layout generation Chromeless phase mask layout generation

2007-02-06

2007-02-06

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000

Reexamination Certificate

active

10259373

ABSTRACT:
Computer-based design and verification tools provide integrated circuit layouts for use in chromeless phase lithography. A phase-mask design tool assigns feature size descriptors to circuit layout features, and mask features are configured using the feature size descriptors. Feature size descriptors can be assigned based on feature size ranges established based on a mask error function, feature dimensions with respect to a lithographic system resolution limit, or selected properties of aerial image intensity as a function of feature size. Circuit layout features are assigned mask features that include twin phase steps. In addition, circuit layout features associated with selected feature descriptors are assigned sub-resolution assist mask pattern portions or other mask pattern portions based on optical and process corrections.

REFERENCES:
patent: 4231811 (1980-11-01), Somekh et al.
patent: 4426584 (1984-01-01), Bohlen et al.
patent: 4456371 (1984-06-01), Lin
patent: 4812962 (1989-03-01), Witt
patent: 4895780 (1990-01-01), Nissan-Cohen et al.
patent: 4902899 (1990-02-01), Lin et al.
patent: 5051598 (1991-09-01), Ashton et al.
patent: 5182718 (1993-01-01), Harafuji et al.
patent: 5208124 (1993-05-01), Sporon-Fiedler et al.
patent: 5241185 (1993-08-01), Meiri et al.
patent: 5242770 (1993-09-01), Chen et al.
patent: 5256505 (1993-10-01), Chen et al.
patent: 5316878 (1994-05-01), Saito et al.
patent: 5324600 (1994-06-01), Jinbo et al.
patent: 5340700 (1994-08-01), Chen et al.
patent: 5362591 (1994-11-01), Imai et al.
patent: 5447810 (1995-09-01), Chen et al.
patent: 5472813 (1995-12-01), Nakagawa et al.
patent: 5498579 (1996-03-01), Borodovsky et al.
patent: 5553273 (1996-09-01), Liebmann
patent: 5553274 (1996-09-01), Liebmann
patent: 5573890 (1996-11-01), Spence
patent: 5578402 (1996-11-01), Watanabe
patent: 5629113 (1997-05-01), Watanabe
patent: 5631110 (1997-05-01), Shioiri et al.
patent: 5633102 (1997-05-01), Toh et al.
patent: 5636002 (1997-06-01), Garofalo
patent: 5657235 (1997-08-01), Liebmann et al.
patent: 5663017 (1997-09-01), Schinella et al.
patent: 5663893 (1997-09-01), Wampler et al.
patent: 5682323 (1997-10-01), Pasch et al.
patent: 5705301 (1998-01-01), Garza et al.
patent: 5707765 (1998-01-01), Chen
patent: 5723233 (1998-03-01), Garza et al.
patent: 5740068 (1998-04-01), Liebmann et al.
patent: 5766806 (1998-06-01), Spence
patent: 5815685 (1998-09-01), Kamon
patent: 5821014 (1998-10-01), Chen et al.
patent: 5825647 (1998-10-01), Tsudaka
patent: 5827623 (1998-10-01), Ishida et al.
patent: 5847959 (1998-12-01), Veneklasen et al.
patent: 5858580 (1999-01-01), Wang et al.
patent: 5862058 (1999-01-01), Samuels et al.
patent: 5863682 (1999-01-01), Abe et al.
patent: 5879844 (1999-03-01), Yamamoto et al.
patent: 5882827 (1999-03-01), Nakao
patent: 5885734 (1999-03-01), Pierrat et al.
patent: 5891596 (1999-04-01), Choi
patent: 5900338 (1999-05-01), Garza et al.
patent: 5900340 (1999-05-01), Reich et al.
patent: 5920487 (1999-07-01), Reich et al.
patent: 5958635 (1999-09-01), Reich et al.
patent: 5972541 (1999-10-01), Sugasawara et al.
patent: 5991006 (1999-11-01), Tsudaka
patent: 5994002 (1999-11-01), Matsuoka
patent: 6007310 (1999-12-01), Jacobsen et al.
patent: 6014456 (2000-01-01), Tsudaka
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6078738 (2000-06-01), Garza et al.
patent: 6081658 (2000-06-01), Rieger et al.
patent: 6114071 (2000-09-01), Chen et al.
patent: 6154563 (2000-11-01), Tsudaka
patent: 6168891 (2001-01-01), Shibata
patent: 6185727 (2001-02-01), Liebmann
patent: 6210841 (2001-04-01), Lin et al.
patent: 6243855 (2001-06-01), Kobayashi et al.
patent: 6249597 (2001-06-01), Tsudaka
patent: 6249904 (2001-06-01), Cobb
patent: 6269472 (2001-07-01), Garza et al.
patent: 6282696 (2001-08-01), Garza et al.
patent: 6289499 (2001-09-01), Rieger et al.
patent: 6298473 (2001-10-01), Ono et al.
patent: 6370679 (2002-04-01), Chang et al.
patent: 6584609 (2003-06-01), Pierrat et al.
patent: 6623895 (2003-09-01), Chen et al.
patent: 6901575 (2005-05-01), Wu et al.
patent: 2003/0097647 (2003-05-01), Pierrat et al.
patent: 1152289 (2001-11-01), None
patent: 2 324 169 (1998-10-01), None
patent: 2 344 436 (2000-06-01), None
patent: 03125150 (1989-10-01), None
patent: 04076551 (1990-07-01), None
patent: 04268556 (1991-02-01), None
patent: 3-80525 (1991-04-01), None
patent: 04369823 (1991-06-01), None
patent: 3-210560 (1991-09-01), None
patent: 8-236317 (1996-09-01), None
patent: 9-319067 (1997-12-01), None
patent: 10-133356 (1998-05-01), None
patent: 11-143085 (1999-05-01), None
patent: 99/47981 (1999-09-01), None
patent: 00/67074 (2000-11-01), None
Bauch, L. et al., “Combination of Transmission and Absorption Mask for a 0.3 μm Lithography,”SPIE 2197:150-157, Jan. 1994.
Fritze, M., et al., “Application of Chromeless Phase-Shift Masks to Sub-100 nm SOI CMOS Transistor Fabrication,”Proceedings of SPIE Optical Microlithography XIII4000, 2000, pp. 388-407.
Inokuchi, K., et al., “Sub-Quarter-Micron Gate Fabrication Process Using Phase-Shifting Mask for Microwave GaAs Devices,”Japanese Journal of Applied Physics, 30(12B):3818-3821, Dec. 1991.
Jinbo, H., and Y. Yamashita, “0.2 μm Or Less i-Line Lithography By Phase-Shifting-Mask Technology,” IEEE Electron Devices Meeting, Dec. 9-12, 1990, pp. 821-824.
Jinbo, H., and Y. Yamashita, “Improvement of Phase-Shifter Edge Line Mask Method,”Japanese Journal of Applied Physics 30(11B):2998-3003, Nov. 1991.
Jinbo, H., et al., “Subhalf-Micron Patterning of Negative Working Resist by Using New Phase-Shifting Masks,”Journal of Vacuum Science TechnologyB 8(6):1745-1748, Nov./Dec. 1990.
Kemp, K., et al., “Optimized Phase Shift Mask Designs for Real Devices,” KTIMicrolithography Seminar, San Jose, CA, 1991.
Kimura, T., and T. Ohshima, “Schottky Characteristics of Subhalf-Micron Gate GaAs Metal-Semiconductor Field-Effect Transistor,”Japanese Journal of Applied Physics 32(2, 2A):L183-L186, Feb. 1993.
Lee, F. and T. Zirkle, “Process for Hybrid Phase-Shifting Mask Fabrication,”Motorola, Inc., Technical Developments, vol. 18, Mar. 1993.
Mack, C.A., “Fundamental Issues In Phase-Shifting Mask Technology,”Proceedings of KTI Microlithography Seminar, San Jose, California, Oct. 14-15, 1991, pp. 23-35.
Pierrat, C. and J. DeMarco, “Phase-Shifting Mask Fabrication,”SPIE 2087:362-371, 1993.
Ronse, K., et al., “Comparison of Various Phase Shift Strategies and Application to 0.35 μm ASIC Designs,”SPIE 1927:2-16, 1993.
Saito, T., et al., “Continuous Phase Transitions Fabricated by Subtractive Process,”SPIE 2087:390-398, 1993.
Tanaka, T., et al., “A Novel Optical Lithography Technique Using the Phase-Shifter Fringe,”Journal of Applied Physics 30(5):1131-1136, May 1991.
Toh, K.H., et al., “Design and Methodology for Dark-Field Phase-Shifted Masks,” Proceedings ofOptical/Laser Microlithography IV SPIE 1463:402-413, 1991.
Toh, K.H., et al., “Optical Lithography with Chromeless Phase-Shifted Masks,” Proceedings ofOptical/Laser Microlithography IV SPIE 1463:74-86, Mar. 1991.
Watanabe, H., et al., “Sub-Quarter-Micron Gate Pattern Fabrication Using A Transparent Phase Shifting Mask,”Vacuum Science TechnologyB 9(6):3172-3175, Nov./Dec. 1991.
Watanabe, H., et al., “Transparent Phase Shifting Mask,” IEEE Electron Devices Meeting, Dec. 9-12, 1990, pp. 821-824.
Yamada, H.T., et al., Fabrication of 0.2 μm Gate Pseudomorphic Inverted Hemt By Phase-Shifting Technology,Solid-State Electronics 38(9):1631-1634, 1995.
Ackmann, P. et al., “Phase Shifting And Optical Proximity Corrections To Improve CD Control On Logic Devices In Manufacturing For Sub sub-0.35-μm I-line,”Proceedings of SPIE 22nd International Symposium on Microlithographyvol. 3051:146-153, Santa Clara, California, Mar. 12-14, 1997.
Asai, N. et al., “Proposal For The Coma Aberration Dependent Overlay Error Compensation T

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