Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1980-12-15
1982-07-06
Skiff, Peter K.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
204192F, 427124, 428432, 148422, 148423, H01C 1012, C22C 2702, C22C 2706
Patent
active
043381456
ABSTRACT:
A chrome-tantalum thin film resistor having a chrome-tantalum alloy thin film containing 10 to 95 atomic % of chrome. By subjecting this chrome-tantalum alloy thin film to heat treatment at temperatures not higher than 900.degree. C., a stable resistor can be obtained. Alternatively, by forming the chrome-tantalum alloy thin film on a substrate which is preheated at temperatures not higher than 900.degree. C., the temperature coefficient of resistance of the resistor can be improved so that a stable resistor can be obtained.
REFERENCES:
patent: 3629776 (1971-12-01), Watano
patent: 3763026 (1973-10-01), Cordes
patent: 3847658 (1974-11-01), Kumagai
patent: 3874922 (1975-04-01), Mickelsen
patent: 4063211 (1977-12-01), Yasujima et al.
patent: 4172718 (1979-10-01), Menzel
Oohashi et al., "Preparation of Tantalum-Titanium Alloy Thin Films by DC Glow-Discharge Sputtering" Electronics and Communications in Japan, vol. 55-C, No. 8, Aug. 1972, pp. 59-66.
Halaby et al., "The Materials of Thin-Film Devices", Electro-Technology, Sep. 1963, pp. 105-107.
Michalak, "Low Energy Sputtering of Resistive Films", Vacuum, vol. 17, No. 6, pp. 317-324.
Itokawa Natsuo
Kobayashi Seiichiro
Yasujima Nobuo
Skiff Peter K.
Taisei Kohki Co., Ltd.
LandOfFree
Chrome-tantalum alloy thin film resistor and method of producing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chrome-tantalum alloy thin film resistor and method of producing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chrome-tantalum alloy thin film resistor and method of producing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2167106