Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1992-06-22
1994-06-28
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257702, 257703, H01L 23053, H01L 2314, H01L 2315
Patent
active
053249860
ABSTRACT:
A chip type varistor in which first and second inner electrodes are embedded in a sintered body obtained by laminating a plurality of semiconductor ceramics layers so as not to be overlapped with each other in the direction of thickness of the ceramics layers, respective one edges of the first and second inner electrodes are led out to one and the other of a pair of side surfaces opposed to each other of the sintered body and are electrically connected to outer electrodes formed on the pair of side surfaces of the sintered body, respectively, a non-connected type inner electrode which is not electrically connected to the above described outer electrodes is embedded in the sintered body, and the non-connected type inner electrode is arranged so as to be overlapped with the first and second inner electrodes while being separated by the semiconductor ceramics layer.
REFERENCES:
patent: 4470099 (1984-09-01), Sawairi
patent: 5119062 (1992-06-01), Nakamura et al.
Nakamura Kazutaka
Nakayama Akinori
Sakabe Yukio
Ueno Yasushi
Ushiro Tomoaki
Abraham Fetsum
Murata Manufacturing Co. Ltd.
Sikes William L.
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