Chip-type semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Beam leads

Reexamination Certificate

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Details

C257S673000, C257S690000, C257S748000, C257S775000, C257S781000, C257S784000, C257S787000

Reexamination Certificate

active

06847116

ABSTRACT:
A chip-type semiconductor light-emitting device includes a semiconductor light-emitting chip connected to a pair of electrodes formed on a substrate. The semiconductor light-emitting chip is molded, together with respective parts of the electrodes, by resin. The electrode has a layered structure having a Cu layer, an Ni layer and an Au layer in that order from the lowermost layer, to have a step formed inside the mold by changing the wall thickness of the Cu layer.

REFERENCES:
patent: 3935501 (1976-01-01), Sterbal
patent: 5227662 (1993-07-01), Ohno et al.
patent: 5936264 (1999-08-01), Ishinaga
patent: 6066861 (2000-05-01), Hohn et al.
patent: 6180962 (2001-01-01), Ishinaga
patent: 6228676 (2001-05-01), Glenn et al.

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