Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2008-03-25
2008-03-25
Pham, Thanhha S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S690000, C257S731000, C257SE25006, C257SE25029
Reexamination Certificate
active
10883356
ABSTRACT:
A circuit structure may be formed in a substrate having a face and an open trench, where one or more chips are to be mounted. At least one bridge may extend across an intermediate portion of the trench, and optionally, may divide the trench into sections. A conductive adhesive layer may be applied to the substrate face and, if included, the bridge. One or more circuit chips may be mounted on the adhesive layer, with at least one edge of one circuit chip adjacent to the trench. Alternatively or additionally, an adhesive layer may be applied to a base of a chip and then mounted to the substrate face, in like fashion. The trench may accommodate excess adhesive flowing out from under the one or more chips, while the bridge retains the adhesive across the width of the trench. If the adhesive is conductive, this provides continuity of the conductive layer on the face of the substrate across the trench. In one example, pairs of circuit chips may be effectively mounted in adjacent relationship for interconnection without interference from excess adhesive.
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Gaudette Thomas M.
Stoneham Edward B.
Endwave Corporation
Kolisch & Hartwell, P.C.
Pham Thanhha S.
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