Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2007-01-30
2007-01-30
Tran, Long (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S690000, C257SE25006, C257SE23085, C438S109000
Reexamination Certificate
active
11301860
ABSTRACT:
A chip structure including a chip, a first passivation layer, a redistribution layer and a second passivation layer is provided. The chip has a wire bonding area adjacent to one side or two sides adjacent to each other of the chip, wherein the chip has multiple first bonding pads disposed inside the wire bonding area and multiple second pads disposed outside the wire bonding area. The first passivation layer disposed on the chip has multiple first openings by which the first and the second bonding pads are exposed. The redistribution layer is disposed on the first passivation layer and extended from the second bonding pads to the wire bonding area. The redistribution layer has multiple third bonding pads located inside the wire bonding area. The second passivation layer disposed over the redistribution layer has multiple second openings by which the first and the third bonding pads are exposed.
REFERENCES:
patent: 7034388 (2006-04-01), Yang et al.
patent: 2001/0003375 (2001-06-01), Kovats et al.
patent: 2003/0094683 (2003-05-01), Poo et al.
patent: 2004/0245630 (2004-12-01), Huang et al.
patent: 2005/0167798 (2005-08-01), Doan
ChipMOS Technologies
ChipMOS Technologies (Bermuda) Ltd.
J.C. Patents
Tran Long
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