Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-06-21
2011-06-21
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S738000, C257S780000, C257S781000, C257SE21476, C438S629000
Reexamination Certificate
active
07964973
ABSTRACT:
A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposes said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; depositing a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposes said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first pattern-defining layer; and removing said first metal layer not under said second metal layer.
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Chou Chien-Kang
Chou Chiu-Ming
Lin Mou-Shiung
Lo Hsin-Jung
Le Dung A.
McDermott Will & Emery LLP
Megica Corporation
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