Chip-scale packaged pressure sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material

Reexamination Certificate

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Details

C257S419000, C257S619000

Reexamination Certificate

active

06346742

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to semiconductor pressure sensors, and specifically, to a chip-scale packaged pressure sensor.
2. Background Information
FIG. 1
is a schematic cross section of a conventional silicon pressure sensor in a metal can package. As shown in
FIG. 1
, the pressure sensor package consists of a silicon die
10
having an etched diaphragm
12
, a backing wafer
14
usually made of Pyrex, a metal can
16
(e.g., TO-
8
or TO-
5
) which houses the pressure sensor, metal pins
18
for providing external interconnection, and a pressure port
20
. The metal can
16
is welded at
22
to maintain a vacuum reference in region
24
, or in the case of differential or gage pressure measurements, a top-side pressure port
26
is provided.
FIG. 2
is a schematic cross section of a conventional pressure sensor in a plastic package
28
. The plastic package pressure sensor
28
consists of a silicon die
30
having a diaphragm
32
, and a backing wafer
34
typically consisting of Pyrex, which is anodically bonded to the silicon die
30
, to form a vacuum cavity
36
therebetween for providing absolute pressure measurements. The backing wafer
34
is attached to a bottom portion
46
of the plastic package
28
using an epoxy or RTV die attach. A gel overcoat
38
(e.g., silicon gel) is provided over the silicon die
30
for communicating pressure from external gaseous media. The plastic package
28
further includes a lid
40
having an opening
42
for directing external pressure to the sensor. The silicon gel provides a minimal amount of protection from adverse effects of the gaseous media for the sensor, circuits and wire interconnects.
SUMMARY OF THE INVENTION
In one embodiment, the present invention comprises a chip-scale sensor package. The chip-scale sensor package includes a semiconductor substrate having a sensor region, and a semiconductor cap having a recess. The semiconductor cap is bonded to the semiconductor substrate with a thermocompression bond to form a cavity therebetween. The semiconductor substrate and/or the semiconductor cap may optionally include one or more semiconductor devices such as an electronically trimmable integrated circuit fabricated thereon using conventional integrated circuit fabrication techniques. In addition, the semiconductor substrate may optionally include an integral stress isolation flexible region for isolation of the sensor region.


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