Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-08-07
2007-08-07
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257SE23021, C257SE23069, C257SE23020, C257SE23179, C257S734000, C257S737000, C257S758000, C257S781000, C257S782000, C257S783000, C257S773000, C257S772000, C257S774000, C257S780000, C257S761000, C257S766000, C257S764000, C257S765000, C257S763000
Reexamination Certificate
active
10709953
ABSTRACT:
A chip structure comprising a chip, a redistribution layer, a second passivation layer and at least a bump is provided. The chip has a first passivation layer and at least a bonding pad. The first passivation layer exposes the bonding pad and has at least a recess. The redistribution layer is formed over the first passivation layer and electrically connected to the bonding pad. Furthermore, the redistribution layer also extends from the bonding pad to the recess. The second passivation layer is formed over the first passivation layer and the redistribution layer. The second passivation layer also has an opening that exposes the redistribution layer above the recess. The bump passes through the opening and connects electrically with the redistribution layer above the recess.
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Huang Min-Lung
Su Ching-Huei
Tsai Chi-Long
Weng Chao-Fu
Advanced Semiconductor Engineering Inc.
Jiang Chyun IP Office
Williams Alexander Oscar
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