Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2008-10-01
2011-10-11
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S693000, C257S698000, C257S787000, C257SE23011, C257S686000, C257S737000, C438S125000, C438S126000, C438S127000, C438S667000
Reexamination Certificate
active
08035213
ABSTRACT:
A chip package structure and a method of manufacturing the same are provided. The chip package structure includes a package portion and a plurality of external conductors. The package portion includes a distribution layer, a chip, a plurality internal conductors and a sealant. The distribution layer has a first surface and a second surface, and the chip is disposed on the first surface. Each internal conductor has a first terminal and a second terminal. The first terminal is disposed on the first surface. The sealant is disposed on the first surface for covering the chip and partly encapsulating the internal conductors, so that the first terminal and the second terminal of each internal conductor are exposed from the sealant. The external conductors disposed on the second surface of the distribution layer of the package portion are electrically connected to the internal conductors.
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Chang Yuan-Ting
Chen Shih-Kuang
Lee Chang-Chi
Advanced Semiconductor Engineering Inc.
Cooley LLP
Wilczewski Mary
LandOfFree
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