Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-08-31
2008-11-04
Thai, Luan (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S706000, C257S707000, C257S718000, C257S719000, C257S720000, C257SE23128, C257SE23193, C438S121000, C438S122000
Reexamination Certificate
active
07446407
ABSTRACT:
A chip package structure includes a substrate, a chip, a first B-stage adhesive, bonding wires, a heat sink and a molding compound. The substrate comprises a first surface, a second surface and a through hole. The chip is arranged on the first surface of the substrate and electrically connected thereto while the through hole of the substrate exposes a portion of the chip. The first B-stage adhesive is arranged between the chip and the first surface of the substrate, and the chip is attached to the substrate through the first B-stage adhesive. The bonding wires are connected between the chip exposed by the through hole and second surface of the substrate. The heat sink is arranged on the first surface of the substrate, covering the chip. The molding compound is arranged on the second surface of the substrate, covering a portion of the substrate and bonding wires.
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Lin Chun-Hung
Shen Geng-Shin
ChipMOS Technologies (Bermuda) Ltd.
ChipMOS Technologies Inc.
J.C. Patents
Thai Luan
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