Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2008-08-26
2009-12-29
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S673000, C257S780000, C257S781000, C257S782000, C257S783000, C257S787000, C257SE23018, C257SE23033, C257SE23039, C257SE23127, C257SE21511
Reexamination Certificate
active
07638880
ABSTRACT:
A chip package including a carrier having an opening, a first chip, bumps, a second chip, bonding wires, a first adhesive layer and a molding compound is provided. The first chip and the second chip are disposed at two opposite side of the carrier. The bumps are disposed between the carrier and a first active surface of the first chip to electrically connect with the first chip and the carrier. The bonding wires pass through the opening of the carrier and are electrically connected with the carrier and the second chip. The first adhesive layer adhered between the first active surface of the first chip and the carrier includes a first B-staged adhesive layer adhered on the first active surface of the first chip and a second B-staged adhesive layer adhered between the first B-staged adhesive layer and the carrier.
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U.S. Office Action Summary of U.S. Appl. No. 12/198,517, dated May 13, 2009.
U.S. Office Action Summary of U.S. Appl. No. 12/244,553, dated May 13, 2009.
Chinese First Examination Report of China Application No. 2008101755291, dated on Aug. 29, 2009.
Shen Geng-Shin
Wang David Wei
ChipMOS Technologies (Bermuda) Ltd.
ChipMOS Technologies Inc.
Clark Jasmine J
J.C. Patents
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