Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-04-26
2011-04-26
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S100000, C257S680000
Reexamination Certificate
active
07932531
ABSTRACT:
A chip package includes a thermal enhanced plate, contacts around the thermal enhanced plate and electrically insulated from the thermal enhanced plate, a film-like circuit layer disposed on the contacts and the thermal enhanced plate, a conductive adhesive layer, a first molding, and at least one chip disposed on the film-like circuit layer. The conductive adhesive layer is disposed between the contacts and the film-like circuit layer electrically connected to the contacts through the conductive adhesive layer. The chip has a back surface, an active surface and many bumps disposed thereon, and the chip is electrically connected to the film-like circuit layer via the bumps. The first molding at least encapsulates a portion of the thermal enhanced plate, the conductive adhesive layer, parts of the contacts and at least a portion of the film-like circuit layer. Therefore, heat dissipation efficiency of the light emitting chip package is improved.
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“1st Office Action of China counterpart application”, issued on Mar. 13, 2009, p. 1-p. 7.
Chen Ya-Chi
Chen Yu-Ren
Lin Chun-Ying
Mao I-Hsin
ChipMOS Technologies Inc.
Jianq Chyun IP Office
Picardat Kevin M
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