Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2004-02-27
2008-12-16
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257SE25013
Reexamination Certificate
active
07466029
ABSTRACT:
In a wafer, a plurality of basic chips F is arranged therein. The basic chip F has a memory capacity of i-mega bytes. By dicing, a memory chip including four basic chips F is cut out of the wafer. The memory chip has a memory capacity of 4×i-mega bytes. A dicing line is interposed between four basic chips F configuring the memory chip, Four basic chips F can change word organization by a control signal individually.
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Tadahiko Sugibayashi, et al., “A 1Gb DRAM for File Applications”, ISSCC Digest of Technical Papers, 1995, pp. 254-255.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pert Evan
Quinto Kevin
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