Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-01-11
2005-01-11
Cuneo, Kamand (Department: 2827)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S459000, C438S460000, C438S118000, C438S106000, C438S113000, C438S110000, C438S068000
Reexamination Certificate
active
06841454
ABSTRACT:
In order to have a thin type semiconductor chips featuring a high yield and a low cost in production, an excellent packaging reliability, and a robust structure against damages, there is provided a method of manufacturing LSI chips, comprising the steps of: pasting on a substrate an adhesive sheet which retains its adhesive strength prior to a processing, then loses it after the processing; bonding non-defective LSI chips on the adhesive sheet, with their device surfaces facing downward; uniformly coating an insulating film on the non-defective LSI chips; uniformly grinding the insulating film to a level of the bottom surfaces of these LSI chips; applying a predetermined process to the adhesive sheet to weaken its adhesive strength thereof so as to peel off a pseudo wafer on which the non-defective LSI chips are bonded; and dicing the LSI chips into a discrete non-defective electronic component by cutting the pseudo wafer.
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Cuneo Kamand
Depke Robert J.
Holland & Knight LLP
Mitchell James M.
Sony Corporation
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