Chip cooling channels formed in wafer bonding gap

Details Chip cooling channels formed in wafer bonding gap Chip cooling channels formed in wafer bonding gap

2007-01-31

2011-10-04

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S706000, C257S712000, C257S714000, C257S715000, C257S717000, C257SE23097, C438S028000, C438S034000, C438S122000

Reexamination Certificate

active

08030754

ABSTRACT:
One embodiment in accordance with the invention is a system that can include a first wafer and a second wafer. The first wafer and the second wafer can be bonded together by a wafer bonding process that forms a gap between the first wafer and the second wafer. The gap can be configured for receiving a heat extracting material.

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