Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-02-01
2011-02-01
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S678000, C257S684000, C257S686000, C257S707000, C257S690000, C438S106000, C438S109000, C438S121000, C438S124000
Reexamination Certificate
active
07880296
ABSTRACT:
The present invention provides a chip carrier structure having a semiconductor chip embedded therein and a protective metal layer formed thereon and a fabrication method thereof. The chip carrier structure includes a chip-embedded carrier structure, and a metal layer formed by electroplating on the bottom surface and side surfaces of the chip-embedded carrier structure. The metal layer prevents moisture from crossing the side surfaces of the chip-embedded carrier structure, so as to prevent delamination, provide a shielding effect, and improve heat dissipation through the metal layer.
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Lai Zao-Kuo
Wong Lin-Yin
Le Thao X
Schmeiser Olsen & Watts LLP
Tran Thanh Y
Unimicron Technology Corp.
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