Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2011-03-15
2011-03-15
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C257S099000, C257SE33061
Reexamination Certificate
active
07906352
ABSTRACT:
A method is disclosed in which a base body is prepared that comprises a layer sequence intended for the LED chip and suitable for emitting electromagnetic radiation. A cap layer is applied to at least one main surface of the base body. A cavity is introduced into the cap layer and is completely or partially filled with a luminescence conversion material. The luminescence conversion material comprises at least one phosphor. A method is also disclosed in which the cap layer comprises photostructurable material and at least one phosphor, such that it is able to function as a luminescence conversion material and can be photostructured directly. LED chips that are producible by means of the method are also described.
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Brunner Herbert
Eissler Dieter
Fischer Helmut
Guenther Ewald Karl Michael
Heindl Alexander
Dickey Thomas L
Fish & Richardson P.C.
Osram Opto Semiconductors GmbH
Yushin Nikolay
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