Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – From phenol – phenol ether – or inorganic phenolate
Patent
1997-10-24
2000-10-31
Thibodeau, Paul
Synthetic resins or natural rubbers -- part of the class 520 ser
Synthetic resins
From phenol, phenol ether, or inorganic phenolate
528202, 528232, 528244, 528245, 528401, C08G 6400, C08G 6368, C08G 1202
Patent
active
06140456&
ABSTRACT:
New starting materials and chemical processes will be used to make fluorinated poly(para-xylylenes) (F-PPX) and fluorinated poly(para-fluoroxylylenes) (F-PPFX). The processes will use some very low cost and readily available starting materials, catalysts, chemical reactors, transport polymerization (TP) systems, and chemical vapor deposition (CVD) systems commonly used for making F-PPX. New TP and CVD deposition systems will also be used to make F-PPX and F-PPFX. These polymers are used for the manufacture of low dielectric films with high thermal stability and are sufficiently strong to withstand planarization and polishing for the manufacture of integrated circuits.
REFERENCES:
patent: 3268599 (1966-08-01), Chow et al.
patent: 3342754 (1967-09-01), Gorham
patent: 3440277 (1969-04-01), Holland et al.
patent: 4291244 (1981-09-01), Beach et al.
patent: 4532369 (1985-07-01), Hartner
patent: 5139813 (1992-08-01), Yira et al.
patent: 5210341 (1993-05-01), Dolbier, Jr. et al.
patent: 5268202 (1993-12-01), You et al.
patent: 5324813 (1994-06-01), Hougham et al.
patent: 5334454 (1994-08-01), Caporiccio et al.
patent: 5424097 (1995-06-01), Olson et al.
patent: 5534068 (1996-07-01), Beach et al.
patent: 5536317 (1996-07-01), Crain et al.
patent: 5536319 (1996-07-01), Wary et al.
patent: 5536321 (1996-07-01), Olsen et al.
patent: 5536322 (1996-07-01), Wary et al.
patent: 5536892 (1996-07-01), Dolbier, Jr. et al.
patent: 5538758 (1996-07-01), Beach et al.
patent: 5556473 (1996-09-01), Olson et al.
patent: 5637395 (1997-06-01), Uemura et al.
patent: 5783614 (1998-07-01), Chen et al.
Jozef Bicerano, Prediction of Polymer Properties, Second Edition, Marcel Dekker, Inc., pp. 1-15, 50-61, 108-111, and 280-295.
Kudo, et al., Characteristics of Plasma-CF Films for Very Low-K Dielectrics, Feb. 10-11, 1997, DUMIC Conference, 1997 ISMIC--222D/97/0034, 85-92.
Kogelschatz, Excitation of Excimer Radiation in Silent Discharges, IEEE, 218-227, 1987.
J.I. Krochiwitz, Encyclopedia of Chem. Tech., vol. 5, 320-373, 1991.
Lang, et al., Vapor Deposition of Very Low K Polymer Films, Poly(Naphthalene), Poly(Fluorinated Naphthalene), Mat. Res. Soc. Symp. Proc., vol. 381, 45-50, 1995.
Labelle, et al., Characterization of Pulsed-Plasma Enhanced Chemical Vapor Deposited Fluorocarbon Thin Films, Feb. 10-11, 1997, DUMIC Conference, 1997 ISMIC--222D/97/0034, 98-105.
Lee, Transport Polymerization of Gaseous Intermediates and Polymer Crystals Growth, J. Macromol. Sci.--Rev. Macromol. Chem., C16(1), 79-127, 1977-1978.
Lee, Polyimides, Polyquinolines and Polyquinozalines: T.sub.g -Structure Relationships, JMS--Rev. Macromol. Chem. Phys., C29(4), 431-560, 1989.
J.J. McKetta, Encyclopedia of Chem. Proc. & Design, vol. 14, 276-291, 1992.
Meriaudeau, et al., Dehydrocyclization of Alkanes Over Zeolite-Supported Metal Catalysts: Monofunctional or Bifunctional Route, Catal. Rev. Sci. Eng., 39 (1&2), 5-48, 1997.
Selbrede, et al., Characterization of Parylene-N Thin Films for Low Dielectric Constant VLSI Applications, Feb. 10-11, 1997, DUMIC Conference, 1997 ISMIC--222D/97/0034, 121-124.
Sharangpani, et al., Advantages of Chemical Vapor Deposition Over Conventional Techniques for the Processing of Amorphous Teflon Fluoropolymer, Feb. 10-11, 1997, DUMIC Conference, 1997 ISMIC--222D/97/0034, 117-120.
Wang, et al., Parylene-N Thermal Stability Increase by Oxygen Reduction-Low Substrate Temperature Deposition, Preannealing, and PETEOS Encapsulation, Feb. 10-11, 1997, DUMIC Conference, 1997 ISMIC--222D/97/0034, 125-128.
Wary, et al., Vacuum-Deposited Parylene AF-4: A Thermally Stable, Low Dielectric Constant Polymer for Interlayer Dielectric Use, Semi-Conductor International, 211-216, Jun. 1996.
Foggiato Giovanni Antonio
Lee Chung J.
Wang Hui
Quester Techology, Inc.
Rickman Holly C
Thibodeau Paul
LandOfFree
Chemicals and processes for making fluorinated poly(para-xylylen does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemicals and processes for making fluorinated poly(para-xylylen, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemicals and processes for making fluorinated poly(para-xylylen will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2053048