Chemically sensitive field effect transistor having electrode co

Details Chemically sensitive field effect transistor having electrode co Chemically sensitive field effect transistor having electrode co

1978-07-26

1980-11-04

James, Andrew J.

357 52, 357 55, 357 65, 357 68, 357 73, H01L 2978, H01L 2934, H01L 2348

Patent

active

042323266

ABSTRACT:
A chemically sensitive field effect transistor (FET), particularly an ion-sensitive FET (ISFET), and a method of making the same, wherein a semi-conductor body of a first conductivity type is provided with source and drain diffusion zones spaced apart and extending a predetermined distance into the semiconductor body from the front face thereof. Also formed in the semiconductor body is a pair of connection zones extending from the front face to the rear face of the semiconductor body, and connected to the diffusion zones on the front face by means of conductor paths, the diffusion zones, the conduction paths, and the connection zones formed of a material having a second conductivity and which are of a second conduction type with opposite polarity to the conduction type of the semiconductor body. External connections are made to the diffusion zones through the conductor paths and the connection zones by means of connection lines contacting the connection zones at the rear face of the semiconductor body.

REFERENCES:
patent: 4097314 (1978-06-01), Schlesier
patent: 4148046 (1979-04-01), Hendrickson
patent: 4158807 (1979-06-01), Senturia
Potassium Ion-Sensitive Field Effect Transistor by Moss et al., Analytical Chemistry, vol. 47, No. 13, Nov. 1975, pp. 2238-2243.

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