Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2011-06-07
2011-06-07
Miller, Brian E (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07957106
ABSTRACT:
Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2−x−yMn1+xAl1+y, Co2−x−yMn1+xSi1+y, Co2−x−yMn1+xGe1+y, and Co2−x−yFe1+xSi1+y, where x and y are selected to create an off-stoichiometric alloy having a crystalline structure that is chemically disordered. The chemically disordered magnetic material has a lower spin-polarization than a Heusler alloy, but still exhibits acceptable GMR amplitudes and low spin-torque noise.
REFERENCES:
patent: 5793279 (1998-08-01), Nepela
patent: 6876522 (2005-04-01), Ambrose et al.
patent: 6977801 (2005-12-01), Carey et al.
patent: 2003/0116426 (2003-06-01), Kim et al.
patent: 2004/0228046 (2004-11-01), Hiramoto et al.
patent: 2005/0073778 (2005-04-01), Hasegawa et al.
patent: 2005/0168882 (2005-08-01), Kim et al.
patent: 2006/0044703 (2006-03-01), Inomata et al.
patent: 2006/0188750 (2006-08-01), Ide et al.
patent: 2007/0121255 (2007-05-01), Tsuchiya et al.
patent: 2007/0230070 (2007-10-01), Mizuno et al.
patent: 2006161120 (2006-06-01), None
Rajanikanth, A. et al., “Spin Polaraization of Co2MnGe and Co2MnSi Thin Films With A2 and L21 Structures”, 17th International Conference on Magnetism (Aug. 2006).
Karthik, S. Vijay et al., “18th Magnetic Materials Center Seminar”, (Jun. 5, 2006).
Yilgin, Resul et al., “Intrinsic Gilbert Damping Constant in Co2MnAl Heusler Alloy Films”, IEEE Transactions on Magnetics, vol. 41, No. 10, pp. 2799-2801 (Oct. 2005).
Sakuraba, Yuya et al., “Fabrication of Co2MnAl Heusler Alloy Epitaxial Film Using Cr Buffer Layer”, Japanese Journal of Applied Physics, vol. 44, No. 9A, pp. 6535-6537 (2005).
Nakajima, K. et al, “Tunnel Magnetoresistance of Disordered, Low-Moment Co2MnSi Heusler Alloy Thin Films”, Journal of Applied Physics 97 (2005).
Singh L. J. et al., “Structural and Transport Studies of Stoichiometric and Off-Stoichiometric Thin Films of the Full Heusler Alloy Co2MnSi”, Journal of Applied Physics, vol. 95, No. 11, pp. 7231-7233 (Jun. 2004).
Gercsi, Z. et al., “Spin Polarization of Co2FeSi Full-Heusler Alloy and Tunneling Magnetoresistance of Its Magnetic Tunneling Junctions”, Applied Physics Letters 89 (2006).
Singh L. J. et al., “Structural, Magnetic, and Transport Properties of Thin Films of the Heusler Alloy Co2MnSi”, Applied Physics Letters, vol. 84, No. 13, pp. 2367-2369 (Mar. 2004).
Kubota, H. et al., “Fabrication and Characterization of Co-Mn-Al Heusler-Type Thin Film”, Journal of Applied Physics 97 (2005).
Ming, Zhang et al., “The Structure, Magnetism, and Electrical-Transport Properties of Heusler Alloys Co2Cr1-xFexAl (x=0.2-0.6)”, Journal of Applied Physics 97 (2005).
Okamura, S. et al., “Structural, Magnetic, and Transport Properties of Full-Heusler Alloy Co2 (Cr1-xFex)Al Thin Films”, Journal of Applied Physics, vol. 96, No. 11, pp. 6561-6564 (Dec. 2004).
Miura, Yoshio et al., “Atomic Disorder Effects of Half-Metallicity of the Full-Heusler Alloys Co2(Cr1-xFex)Al: A First-Principal Study”, Physical Review B 69 (2004).
Carey Matthew J.
Childress Jeffrey R.
Maat Stefan
Dravininkas Adam B
Duft Bornsen & Fishman LLP
Hitachi Global Storage Technologies - Netherlands B.V.
Miller Brian E
LandOfFree
Chemically disordered material used to form a free layer or... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemically disordered material used to form a free layer or..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemically disordered material used to form a free layer or... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2714595