Chemically active isolation passageway for deposition chambers

Details Chemically active isolation passageway for deposition chambers Chemically active isolation passageway for deposition chambers

1991-06-28

1992-02-25

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Running length work

118719, 118723, 414217, C23C 1648

Patent

active

050903560

ABSTRACT:
An improved gas gate (34) is adapted to operatively interconnect to adjacent chambers in which process gases are introduced for depositing a first layer (16) upon a substrate (11) in a first chamber (28) and different process gases are introduced for depositing a second layer (18) in the second chamber (30) in continuous low pressure glow dicharge deposition process. A plurality of electrodes (60) and grounded shields (62) are positioned in the isolation passageway (92) of gas gate (34). The electrodes (60) have a potential sufficient to create a plasma from any gas molecule escaping from one of the deposition chambers. After the plasma is formed it is attracted to and captured or plated on the shield (62) preventing the gas plasma from landing on the substrate material (11) or passing through the gas gate. The present invention reduces the back diffusion of gases through the gas gate by actively eliminating free gas molecules by ionizing them to form a plasma and capturing the plasma ions in a permanent fashion.

REFERENCES:
patent: 4626447 (1986-12-01), Doehler
patent: 4664951 (1987-05-01), Doehler
patent: 4723507 (1988-02-01), Ovshinsky
patent: 4920917 (1990-05-01), Nakatani

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