Chemical vapor phase growth method and chemical vapor phase grow

Details Chemical vapor phase growth method and chemical vapor phase grow Chemical vapor phase growth method and chemical vapor phase grow

1994-01-13

1995-04-25

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118715, 118725, C23C 1600

Patent

active

054095409

ABSTRACT:
A chemical vapor phase growth method and apparatus therefor for depositing tungsten silicide, using source gases silane (SiH.sub.4) and tungsten hexafluoride (WF.sub.6). In this apparatus, water vapor at a partial pressure of 10.sup.-8 to 10.sup.-9 order of Torr is supplied in the process of successively depositing tungsten silicide films on semiconductor substrates of plural batches, whereby the sheet resistance of the tungsten silicide films can be made constant through the batches. It is thus possible to solve the problem of a conventional apparatus, i.e., the phenomenon that the sheet resistance of the silicide films increases as the batch number increases. This constant sheet resistance is attained by keeping the thickness of the tungsten silicide films uniform through the process of all batches.

REFERENCES:
patent: 4817557 (1989-04-01), Diem
patent: 4957777 (1990-09-01), Ilderem
patent: 4966519 (1990-10-01), Davis
patent: 4985372 (1991-01-01), Narita
patent: 5180432 (1993-01-01), Hansen

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