Chemical vapor phase growth method and chemical vapor phase grow

Details Chemical vapor phase growth method and chemical vapor phase grow Chemical vapor phase growth method and chemical vapor phase grow

1992-11-06

1994-03-29

Beck, Shrive

Coating processes

Measuring, testing, or indicating

4271261, 427255, 4272551, C23C 1600

Patent

active

052982785

ABSTRACT:
A chemical vapor phase growth method and apparatus therefor for depositing tungsten silicide, using source gases silane (SiH.sub.4) and tungsten hexafluoride (WF.sub.6). In this apparatus, water vapor at a partial pressure of 10.sup.-8 to 10.sup.-9 order of Torr is supplied in the process of successively depositing tungsten silicide films on semiconductor substrates of plural batches, whereby the sheet resistance of the tungsten silicide films can be made constant through the batches. It is thus possible to solve the problem of a conventional apparatus, i.e., the phenomenon that the sheet resistance of the silicide films increases as the batch number increases. This constant sheet resistance is attained by keeping the thickness of the tungsten silicide films uniform through the process of all batches.

REFERENCES:
patent: 3874922 (1975-04-01), Mickelsen
patent: 4668530 (1987-05-01), Reif et al.
patent: 4880664 (1989-11-01), O'Dowd et al.
patent: 4966869 (1990-10-01), Hillman et al.
JP 2085370 Abstract, Derwent Publications Ltd., WPI Acc No. 90-136533/18 (Mar. 1990).

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