Chemical vapor growth apparatus having an exhaust device includi

Details Chemical vapor growth apparatus having an exhaust device includi Chemical vapor growth apparatus having an exhaust device includi

1992-10-05

1993-10-05

Owens, Terry J.

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

118715, 4272481, C23C 1600

Patent

active

052503232

ABSTRACT:
A chemical vapor growth apparatus comprises a process chamber for carrying out a chemical vapor growth process; source gas inlet for introducing at least one source gas to the process chamber from a gas source; source gas flow-rate controller for controlling the flow-rate of the source gas to be sent to the process chamber through the inlet; a first exhaust for exhausting the source gas remaining in the inlet and in the gas flow-rate controller, connected to the source gas inlet and the source gas flow-rate controller; a trap for absorbing the source gas remaining in the source gas inlet and the gas flow-rate controller, provided in the first exhaust; and a second exhaust for exhausting gases and particles generated by chemical reaction from the process chamber, the second exhaust being connected to the process chamber and to a vacuum pump.

REFERENCES:
patent: 4816046 (1989-03-01), Maebo et al.
Patent Abstracts of Japan, vol. 13, No. 238 (JP 1-47872) published Feb. 22, 1989.

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