Chemical vapor desposition of silicon carbide

Details Chemical vapor desposition of silicon carbide Chemical vapor desposition of silicon carbide

1988-09-26

1990-05-08

Morgenstein, Norman

Coating processes

Coating by vapor, gas, or smoke

Carbon or carbide coating

4272551, 4272552, 423345, C23C 1600, C01B 3136

Patent

active

049237160

ABSTRACT:
Silicon carbide is deposted by chemical vapor deposition from a vapor source having a single molecular species that provides both the silicon and the carbon. The molecular species has the composition C.sub.n Si.sub.n H.sub.m, where m ranges from 2n+1 to 4n+1 inclusive and n ranges from 2 to 6 inclusive, and exhibits a primary pyrolysis mechanism producing reactive fragments containing both silicon and carbon atoms. Unbalanced decomposition paths are avoided. The silicon and carbon atoms are necessarily codeposited in equal numbers and at equal rates onto the substrate, producing stoichiometric deposited silicon carbide. Preferred molecular sources include H.sub.3 SiCH.sub.2 CH.sub.2 SiH.sub.3, a silacycloalkane of the form (--SiH.sub.2 CH.sub.2 --).sub.p, where p is 2, 3, 4, or 5, and a cyclic structure of the form (--SiH(CH.sub.3)--).sub.q, where q is 4 or 5.

REFERENCES:
patent: 4459338 (1984-07-01), Angelini et al.
patent: 4810526 (1989-03-01), Ito et al.

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