Chemical vapor deposition under a single reactor vessel divided

Details Chemical vapor deposition under a single reactor vessel divided Chemical vapor deposition under a single reactor vessel divided

1993-06-01

1994-11-22

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118715, 118723E, 118723MR, 118723ME, C23C 1600

Patent

active

053665554

ABSTRACT:
Apparatus for a sequential continuous vapor deposition process provides a plurality of physically separated process environments in a single reactor vessel. A substrate mounting plate within the reactor vessel movably positions a substrate mounted thereon sequentially between the plurality of separated process environments. Each of the process environments are defined by a gas emitter structure for emitting a predetermined gas from a source thereof to the environment adjacent to the substrate when it is moved into position adjacent thereto and an exhaust structure through which the gas flows from the environment. A substrate positioning structure movably positions the substrate mounting plate so that the substrate is thereby sequentially passed through each one of the process environments. A vacuum pump between the chamber and an external exhaust environment produces a negative pressure within the reactor vessel relative to pressures at the plural gas emitters to maintain physical separation of gases flowing within the plurality of separated process environments.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola
patent: 4413022 (1983-11-01), Suntola
patent: 4622919 (1986-11-01), Suzuki et al.
patent: 4664743 (1987-05-01), Moss
patent: 4767641 (1988-08-01), Kieser
patent: 4826585 (1989-05-01), Davis
patent: 4871581 (1989-10-01), Yamazaki
patent: 4926791 (1990-05-01), Hirose
patent: 4976996 (1990-12-01), Monkowski
patent: 4987856 (1991-01-01), Hey

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