Coating apparatus – Gas or vapor deposition – Work support
Reexamination Certificate
1998-08-20
2001-04-10
Jones, Deborah (Department: 1775)
Coating apparatus
Gas or vapor deposition
Work support
C118S715000, C118S718000, C118S724000, C118S728000, C118S729000, C118S730000, C204S298070, C422S105000
Reexamination Certificate
active
06214123
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates generally to systems and methods for manufacturing semiconductor wafers. More particularly, the present invention relates to chemical vapor deposition systems and methods for depositing films on semiconductor wafers.
BACKGROUND OF THE INVENTION
Over the last few decades, the electronics industry has undergone a revolution by the use of semiconductor technology to fabricate small, highly integrated electronic devices. The most common semiconductor technology presently used is silicon-based. A large variety of semiconductor devices have been manufactured having various applicabilities and numerous disciplines.
Semiconductor devices are commonly fabricated on silicon wafers by introducing sequentially stacked patterned layers, such as conductive, dielectric and capping layers, on the surfaces of the wafers. Chemical vapor deposition systems are commonly used to deposit films or layers on semiconductor wafers.
Chemical vapor deposition systems are typically equipped with the following components: (1) a chemical vapor deposition chamber; (2) deposition or reactive gas sources; (3) inlet lines for transferring gas from the gas sources into the deposition chamber; (4) a mechanism for heating the wafers on which the film is to be deposited; (5) an outlet line; and (6) a vacuum source or pump for evacuating the compression chamber through the outlet line.
Processing efficiency is an important aspect of chemical vapor deposition systems. To enhance process efficiency, it is desirable to maximize the size of wafers used in chemical vapor deposition systems.
SUMMARY OF THE INVENTION
One aspect of the present invention relates to a chemical vapor deposition system for use with a wafer, such as a circlet wafer, having a wafer opening. The chemical vapor deposition chamber includes a wafer mounting position at which the wafer can be mounted within the chamber. The system also includes a first gas injector for directing reactive gases toward the wafer mounting position, and a rotatable member constructed and arranged to extend at least partially through the wafer opening of the circlet wafer. A drive mechanism is used for rotating the rotatable member.
Another aspect of the present invention relates to a chemical vapor deposition method including the steps of providing a wafer including a wafer opening, and inserting a rotatable member through the wafer opening. The method also includes the steps of rotating the rotatable member and the wafer in unison, and depositing a layer on the rotating wafer.
A further aspect of the present invention relates to a chemical vapor deposition system including a chemical vapor deposition chamber. The system also includes a gas injector for discharging first and second reactive gases into the chamber. The gas injector includes a mixing region for mixing the first and second reactive gases before the first and second reactive gases are discharged from the gas injector into the chamber.
A variety of advantages of the invention will be set forth in part in the description that follows, and in part will be apparent from the description, or may be learned by practicing the invention. It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention as claimed.
REFERENCES:
patent: 4858558 (1989-08-01), Ohmura et al.
patent: 5611858 (1997-03-01), Zedja
patent: 5935334 (1999-08-01), Fong et al.
Gardner Mark I.
Gilmer Mark C.
Paiz Robert
Advanced Micro Devices , Inc.
Jones Deborah
Miranda Lymarie
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