Chemical vapor deposition reactor for silicon epitaxial processe

Details Chemical vapor deposition reactor for silicon epitaxial processe Chemical vapor deposition reactor for silicon epitaxial processe

1982-06-01

1983-12-20

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

4272481, 427255, 118725, 118728, 156613, 156611, H01L 2102

Patent

active

044217862

ABSTRACT:
A chemical vapor deposition reactor (40) is disclosed. The reactor (40) has a vertically mounted tube (43), axially disposed within a chamber (41). A plurality of spaced, planar, wafer holders (44--44), having resistance heated portions (45--45) thereon, are fixedly mounted to and radially extend from the tube (43). Silicon wafers (13--13) are placed on the resistance heated portions of the holders (44--44) and reactant gases are caused to radially flow through apertures (91--91) in the tube (43), between adjacent heated holders (44--44) and across the surface of the wafers (13--13) to deposit doped silicon thereon. Undeposited reactants and gases are removed via an axisymmetric exhaust port 81.

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"Chemical Vapor Deposition Reactor", S. Chem., NASA Tech. Brief, vol. 4, Item 62, Aug. 1979.

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