Chemical vapor deposition reactor for producing metal carbide or

Details Chemical vapor deposition reactor for producing metal carbide or Chemical vapor deposition reactor for producing metal carbide or

1986-08-25

1990-02-13

Doll, John

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

422254, 118715, 118719, 118722, 118729, 423345, 156DIG99, 156DIG112, C30B 2962, C30B 3500

Patent

active

049005251

ABSTRACT:
A reactor for producing single crystal metal carbide, nitride, or carbonitride whiskers, where the metal is one or more of Ti, Zr, Hf, Nb, Ta or W. The reactor walls and inner fixtures provide the substrate surfaces, greatly increasing the surface area available for whisker growth. Preferred substrate materials are nickel or high nickel alloy coated with TiC or TiN, or, for carbide or carbonitride whiskers, nickel impregnated graphite. An alternate embodiment provides a collecting chamber and vibrating means to mechanically detach whiskers, allowing for more efficient batch, or continuous operation.

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