Chemical vapor deposition reactor and process

Details Chemical vapor deposition reactor and process Chemical vapor deposition reactor and process

1986-02-27

1991-01-01

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

264 81, C23C 1624

Patent

active

049811029

ABSTRACT:
A reactor having a heated liner for producing silicon by chemical vapor deposition (CVD) and means for supplying a gas stream in the turbulent flow region. A gas stream including a silicon-containing compound is passed through a deposition chamber at turbulent flow rates for deposition of silicon on a non-reactive substrate liner heated above the decomposition temperature of the silicon-containing compound. Optionally, the liner is removable from the reactor for separation of deposited metal. Also optionally, the temperature of the liner in situ may be raised above the melting point of the deposited metal for melt out and recovery.

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patent: 3673983 (1972-07-01), Strater
patent: 3805736 (1974-04-01), Foehring
patent: 3850679 (1974-11-01), Sopko
patent: 3865647 (1975-02-01), Reuschel
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patent: 4131659 (1978-12-01), Authier
patent: 4238436 (1980-12-01), Hill
patent: 4292264 (1981-09-01), Cota
Perry, Chemical Engineer's Handbook, McGraw Hill, N.Y. .COPYRGT.1963, pp. 5-22 and 5-23.

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