Chemical vapor deposition reactor and method of operation

Details Chemical vapor deposition reactor and method of operation Chemical vapor deposition reactor and method of operation

1989-07-28

1991-02-19

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

4272481, C23C 1600

Patent

active

049933582

ABSTRACT:
A chemical vapor deposition (CVD) reactor and method are disclosed wherein a chamber, preferably configured for receiving a single wafer as a deposition substrate, has multiple gas inlet orifices and exhaust ports which are independently adjustable for dynamically varying and controlling directionality of local gas flow vectors toward and past the deposition substrate. The injection angle of reactant gas being introduced into the chamber is adjusted by baffles for statically deflecting gas flow entering the chamber. Adjustment of the gas inlet orifices and/or exhaust ports and adjustment of the injection angle for the reactant gas is selected for achieving enhanced coating uniformity, and conformality of deposition if necessary or desired, on the substrate.

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