Chemical vapor deposition reactor and method

Details Chemical vapor deposition reactor and method Chemical vapor deposition reactor and method

1994-05-16

1996-02-27

Bueker, Richard

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 84, 117 88, 118715, 118725, 118728, C23C 1600

Patent

active

054939879

ABSTRACT:
A CVD reactor and method for growing semiconductor material upon a selected surface of a semiconductor wafer supported within the reactor includes a plurality of heat shields that are arranged relative to the peripheral edge and underside of the wafer to alter the radiation of flux from the wafer that is heated to elevated temperatures by a bank of high-intensity lamps that are oriented to illuminate the upper side of the wafer through a transparent wall of the reactor. A reactant gas flowing into the chamber from above the wafer is inhibited from flowing about the underside of the wafer, thereby assuring wafers that are not contaminated on the underside.

REFERENCES:
patent: 4951601 (1990-08-01), Mayden et al.
patent: 5156820 (1992-10-01), Wong et al.

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