Chemical apparatus and process disinfecting – deodorizing – preser – Physical type apparatus – Crystallizer
Patent
1986-08-27
1989-06-13
Doll, John
Chemical apparatus and process disinfecting, deodorizing, preser
Physical type apparatus
Crystallizer
118725, 118730, C30B 3500
Patent
active
048391450
ABSTRACT:
A reactor, suitable for CVD processes, which presents a high aspect ratio to reactant gasses, is described. Substrates are mounted on oppositely disposed susceptors in a vertical chimney-type reactor. Means are provided to rotate the susceptors about an axis perpendicular to gas flow. Side-loading or top-loading mechanisms are provided for loading and unloading the susceptors through a gate valve. A diffuser below the reaction zone adjusts the gas flow into the reaction zone.
REFERENCES:
patent: 3594227 (1971-07-01), Oswald
patent: 3641974 (1972-02-01), Yamada et al.
patent: 3696779 (1972-10-01), Murai et al.
patent: 4018184 (1977-04-01), Nagasawa et al.
patent: 4279669 (1981-07-01), Braun et al.
patent: 4368098 (1986-01-01), Manasevit
patent: 4404265 (1983-09-01), Manasevit
patent: 4465416 (1984-08-01), Burkhalter et al.
patent: 4468283 (1984-08-01), Ahmed, I
patent: 4503807 (1985-03-01), Nakayama et al.
patent: 4509456 (1985-04-01), Kleinert et al.
patent: 4565157 (1986-01-01), Brors et al.
patent: 4587002 (1986-05-01), Bok
patent: 4606935 (1986-08-01), Blum
Leys et al., "Growth of Multiple Thin Layer Structures . . . ", J. Crys. Growth 68 (1984) 431-436.
Silvestri, V., "Apparatus for the Introduction of Substrates into a Vapor Deposition System", IBM Tech. Discl. Bul. vol. 8, No. 5, 10/65.
Whitner, R., "Apparatus for the Deposition of Silicon Nitride", Technical Digest No. 11, Jul. 1968, pp. 5-6, Western Electric Co.
"A New Method for the Growth of GaAs Epilayer at Low H.sub.2 Pressure", Duchemin et al., Journal of Crystal Growth 45 (1978) 181-186.
Fan John C. C.
Gale Ronald P.
Breneman R. Bruce
Doll John
Massachusetts Institute of Technology
LandOfFree
Chemical vapor deposition reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical vapor deposition reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition reactor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1276285