Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1986-04-18
1987-02-03
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118725, 118728, 118729, 118730, 118733, C23C 1308
Patent
active
046402233
ABSTRACT:
A chemical vapor deposition reactor for deposition on substrates, for example silicon epitaxial depositions. The apparatus includes a heating chamber in which a reactor is placed. Means of heating the substrates in the reactor is spaced from the reactor. The reaction chamber is positioned in the heating chamber. It has a load/unload opening outside of the heating chamber and an exhaust port. A reactant distribution means receives and discharges reactants into the reaction chamber. A wafer carrier holds a plurality of wafer retainers. It is moved in and out of the reaction chamber by moving means. A seal closes the reaction chamber opening when the wafer carrier is placed in the reaction chamber. A conditioning chamber is located adjacent to the reaction chamber and includes a door. Preconditioning of the wafers before introduction in to the reaction chamber, and subsequent cooling outside of the reaction chamber, can be accomplished in the conditioning chamber.
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Bueker Richard
Mon Donald D.
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