Chemical vapor deposition reactor

Details Chemical vapor deposition reactor Chemical vapor deposition reactor

1976-07-12

1977-07-05

Wolk, Morris O.

Coating apparatus

With cutting, punching or tearing of work

Web or sheet work

23252R, 427 94, 427 95, 427248A, 118 59, C23C 1108, B05D 512

Patent

active

040332861

ABSTRACT:
An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

REFERENCES:
patent: 3293074 (1966-12-01), Nickl
patent: 3341374 (1967-09-01), Sirtl
patent: 3481781 (1969-12-01), Kern
patent: 3525595 (1970-08-01), Zirngibl et al.
patent: 3641974 (1972-02-01), Yamada et al.
patent: 3696779 (1972-10-01), Murai et al.
patent: 3717439 (1973-02-01), Sakai

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