Chemical vapor deposition reaction apparatus having isolated rea

Coating apparatus – Gas or vapor deposition – Multizone chamber

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Details

118715, 118725, 118730, 414217, 4272481, C23C 1600

Patent

active

049627260

ABSTRACT:
In a CVD reaction apparatus having a heated reaction chamber (102) and a buffer chamber (103) connected continuously under the reaction chamber and a wafer boat elevator (114) which is to be raised to put the wafer boat (113) in the reaction chamber and brought down to the buffer chamber (103), a vertically moving shutter (122) is provided which gas-tightly isolates the buffer chamber (103) from the reaction chamber (102) during the CVD reaction process and an evacuation tube (123') having an evacuation valve (123) and an inert gas inlet tube (125') are connected to the buffer chamber (103), for maintaining the pressure of the buffer chamber higher than that of the reaction chamber.

REFERENCES:
patent: 3749383 (1973-07-01), Voigt et al.
patent: 4047624 (1977-09-01), Dorenbos
patent: 4503807 (1985-03-01), Nakayama et al.
patent: 4640223 (1987-02-01), Dozier
patent: 4666734 (1987-05-01), Kamiya et al.
patent: 4883020 (1989-11-01), Kasai et al.

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