Chemical vapor deposition-produced silicon carbide having improv

Details Chemical vapor deposition-produced silicon carbide having improv Chemical vapor deposition-produced silicon carbide having improv

1995-05-31

1997-03-18

Turner, Archene

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10628713, 423345, 428698, C01B 3136

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active

056121326

ABSTRACT:
.beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.

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patent: 5374412 (1994-12-01), Pickering et al.
Mutsui Product Literature; "Muhsic-Coat Mitsui Ultra High-purity SiC Coating".
Springer Proceedings in Physics, vol. 43, "Applications of High Purity SiC Prepared by Chemical Vapor Deposition", Y. Chinone, S. Ezaki, F. Fujita, and K. Matsumoto, pp. 198-206.

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