Chemical vapor deposition-produced silicon carbide having improv

Details Chemical vapor deposition-produced silicon carbide having improv Chemical vapor deposition-produced silicon carbide having improv

1995-05-11

1997-02-18

Kunemund, Robert

Fishing, trapping, and vermin destroying

117101, 117104, 117951, H01L 2120

Patent

active

056041519

ABSTRACT:
.beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.

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Bartlett et al., "epitaxial Growth of B. Silicon Carbide" Mat. Res. Bull, vol. 4 pp. 5341-5354 1969.
Saidov et al, "Study of Growth Conditions of Silicon Carbide Epitaxial Layers" Jour. of Crystal Growth, vol. 87 (1988) pp. 519-522.

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