Chemical vapor deposition process for depositing large-grain pol

Details Chemical vapor deposition process for depositing large-grain pol Chemical vapor deposition process for depositing large-grain pol

1989-01-25

1991-06-25

Morgenstern, Norman

Coating processes

Coating by vapor, gas, or smoke

427255, 437233, C23C 1600, H01L 21469

Patent

active

050265741

ABSTRACT:
A deposition process includes the steps of heating a substrate, and passing silane gas over the substrate such that the heated substrate causes decomposition of the silane gas thereby to cause deposition of polysilicon film on the substrate. The temperature of the substrate and the pressure of the silane gas are controlled so as to increase the grain size of the deposited films.

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"Thin Film Process", Ed. Vossen et al., pp. 274-278, Academic Press, N.Y., 1978.
"Chemical Vapor Depositon", by Blocker, Deposition Technologies for Film and Coatings, Noyes Publication, 1982, pp. 335-364.
Cauer et al., "Chemical Vapor Deposition Polycrystallin Si", J. Elecrochem Soc.; Solid State Science & Tech., pp. 1565-1570, vol. #119, #11, date unknown (Nov.).
Zolinger et al., "Growth Conditions & Properties of Evaporated Semicrystalline Si Layers", Thin Solid Films, 58, #1 (15 Mar. 1979), pp. 89-93.

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