Chemical vapor deposition precursors for deposition of...

Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C556S012000, C556S043000, C438S685000, C427S427000, C427S587000

Reexamination Certificate

active

06989457

ABSTRACT:
Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to constitute tantalum/silicon source reagents. The precursors of the invention are advantageously employed in semiconductor manufacturing applications to form diffusion barriers in connection with copper metallization of the semiconductor device structure.

REFERENCES:
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6399532 (2002-06-01), Dorer et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemical vapor deposition precursors for deposition of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical vapor deposition precursors for deposition of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical vapor deposition precursors for deposition of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3583053

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.